ADL8107ACPZN

ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6GHz to 18GHz. It provides a typical gain of 24dB at 7GHz to 16GHz, a 1.3dB typical noise figure at 7GHz to 16GHz, a 18.5dBm typical output power for 1dB compression (OP1dB) at 7GHz to 16GHz, and a typical output third-order intercept (OIP3) of 29dBm at 7GHz to 16GHz, requiring only 90mA from a 5V drain supply voltage. This low noise amplifier has a high output second-order intercept (OIP2) of 30.5dBm typical at 7GHz to 16GHz, making the ADL8107 suitable for military and test instrumentation applications. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making the ADL8107 ideal for surface-mounted technology (SMT)-based, high density applications. Application includes test instrumentation, military communications, radar.

• Single positive supply (self biased)
• Frequency range from 6GHz to 7GHz (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 22.5dB typical gain (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 1.9dB typical noise figure (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 12dB typical input return loss (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 13dB typical output return loss (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 18dBm typical OP1dB (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 19.5dBm typical saturated output power (VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 16% typical power added efficiency (measured at PSAT, VDD = 5V, (IDQ) = 90mA, TCASE = 25°C)
• 8 lead LFCSP package, operating temperature range from -40°C to +85°C

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