ADPA9002ACGZN

ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10GHz. It is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. It is widely used in application such as military and space, test instrumentation etc.

• Gain is 14.5dB typical at (TA = 25°C, VDD = 12V)
• Output power for 1dB compression is 29dBm typical at (TA = 25°C, VDD = 12V)
• Output third-order intercept is 43dBm typical at (TA = 25°C, VDD = 12V)
• 50 ohm matched input/output
• Quiescent current is 385mA typical at (TA = 25°C, VDD = 12V)
• Drain voltage is 12V typical at (TA = 25°C, VDD = 12V)
• Operating temperature is -40°C to +85°C
• Package style is 32-lead lead frame chip scale, premolded cavity [LFCSP-CAV]

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