ADRF5519BCPZN-R7

ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3GHz to 2.8GHz. It is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch. In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5dB and handles a long-term evolution (LTE) average power (9dB peak to average ratio (PAR)) of 43dBm for full lifetime operation. It is used in application such as wireless infrastructure, TDD massive multiple input and multiple output and active antenna systems, TDD-based communication systems etc.

• 2-stage LNA and high power silicon SPDT switch, on-chip bias and matching
• Single-supply operation, high power handling at TCASE = 105°C
• High gain mode is 35dB typical at 2.6GHz
• Low gain mode is 14dB typical at 2.6GHz
• RXOUT-CHA and RXOUT-CHB is 45dB typical, TERM-CHA and TERM-CHB is 60dB typical
• Low insertion loss is 0.5dB typical at 2.6GHz, positive logic control
• Power-down mode and low gain mode, high OIP3 is 32dBm typical
• Supply voltage is 5V typical, supply current (high gain) is 110mA typical
• Supply current (power down mode) is 12mA typical
• Operating temperature is -40°C to +105°C, package style is 40-lead LFCSP

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