HMC1114PM5E

HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering <gt/>10W (up to 42dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7GHz to 3.8GHz, at an input power (PIN) of 18dBm. The gain flatness is <lt/>1 dB typical at small signal levels. The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification. The application includes extended battery operation for public mobile radios, power amplifier stage for wireless infrastructures, test and measurement equipment, commercial and military radars, general-purpose transmitter amplification.

• Frequency range from 2.7 to 3.2GHz (TA = 25°C, VDD = 28V)
• Small signal gain is 34.5dB (typ, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Gain flatness is 0.8dB (typ, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Return loss is 12dB (input), 7.5dB (output) (typ, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Noise figure is 5.5dB ((typ, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Output power is 42dBm (typ, PIN = 16dBm, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Power gain is 25.5dB (typ, PIN = 16dBm, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Power added efficiency is 47.5% (typ, PIN = 16dBm, TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• Supply voltage range from 24 to 32V (TA = 25°C, VDD = 28V, 2.7GHz to 3.2GHz)
• 32 lead LFCSP-CAV package, operating temperature range from -40°C to +85°C

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