HMC582LP5E

HMC582LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. The prescaler and RF/2 functions can be disabled to conserve current if not required. Typical application includes point to point/multipoint radio, test equipment & industrial controls, SATCOM, military end-use.

• No external resonator needed
• Frequency range from 11.1 to 12.4GHz (Fo, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Power output range from +5 to +12dBm (RFOUT, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• SSB phase noise a 100KHz offset, Vtune= +5V at RFOUT is -110dBc/Hz (typ, TA = +25°C)
• Tune voltage range from 2 to 12V (Vtune, TA = +25°C)
• Supply current is 350mA (typ, Icc(Dig) + Icc(Amp) + Icc(RF), TA = +25°C)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C)
• Output return loss is 2dB (typ, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Harmonics/subharmonics is 32dBc (typ, 1/2, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• 32 lead QFN package, operating temperature range from -40°C to +85°C

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