HMC8410LP2FETR

HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01GHz to 10GHz. It provides a typical gain of 19.5dB, a 1.1dB typical noise figure, and a typical output IP3 of 33dBm, requiring only 65mA from a 5V supply voltage. The saturated output power (PSAT) of upto 22.5dBm enables the low noise amplifier(LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers. It also features inputs/outputs (I/Os) that are internally matched to 50 ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. It is used in application such as software defined radios, electronic warfare, radar applications etc.

• Input return loss is 15dB typ at (0.01GHz to 3GHz, TA = 25°C)
• Output return loss is 24dB typ at (0.01GHz to 3GHz, TA = 25°C)
• Operating temperature is -40°C to +85°C
• Package style is 6-lead LFCSP

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