LTC1157CS8#PBF

LTC1157 is a dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS(ON) N-channel switch (N-channel switches are required at 3.3V because P-channel MOSFETs do not have guaranteed RDS(ON) with VGS ≤ 3.3V). This device internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications. The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. It is used in application such as notebook computer power management, palmtop computer power management, P-channel switch replacement, battery charging and management, mixed 5V and 3.3V supply switching, stepper motor and DC motor control, cellular telephones and beepers etc.

• Operates on 3.3V or 5V nominal supplies
• 3 microamps standby current
• 80 microamps ON current
• Drives low cost N-channel power MOSFETs
• No external charge pump components
• Controlled switching ON and OFF times
• Input capacitance is 5pF typical
• Operating temperature is 0°C to 70°C
• Package style is 8-lead SOIC

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